This book emphasizes
the importance of the fascinating atomistic insights into the defects and the
impurities as well as the dynamic behaviors in silicon materials, which have
become more directly accessible over the past 20 years. Such progress has been
made possible by newly developed experimental methods, first principle theories,
and computer simulation techniques.
The book is aimed at young researchers, scientists, and technicians in related industries. The main
purposes are to provide readers with 1) the basic physics behind defects in
silicon materials, 2) the atomistic modeling as well as the characterization
techniques related to defects and impurities in silicon materials, and 3) an
overview of the wide range of the research fields involved.