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Growth of Crystals
49,60 €
Springer-Verlag New York Inc.
Sivumäärä: 238 sivua
Asu: Pehmeäkantinen kirja
Painos: Softcover reprint of
Julkaisuvuosi: 2012, 07.05.2012 (lisätietoa)
Kieli: Englanti
Tuotesarja: Growth of Crystals 15
The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).

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Myymäläsaatavuus
Helsinki
Tapiola
Turku
Tampere
Growth of Crystals
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ISBN:
9781461571278
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