Modern integrated circuits on a very large scale present an ever-growing challenge to the capabilities of the materials that are available. As features become smaller, stress-induced voiding and electromigration are increasingly likely to affect reliability. The papers presented in this volume are from the Second Workshop held on stress-induced phenomena in metallization at the University of Texas, Austin, USA, which extended the focus from stress-induced void formation to include electromigration failure in submicron interconnect structures. The aim was to assess the current understanding of the problems, to discuss the implications for the reliability of future devices, and to identify needs and directions for future research. This text is intended to be of use to engineers and research scientists in microelectronics and materials science.