There is an ever-present need for electronic devices with improved power, frequency and temperature performance. To that end, the introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes have been catalysts for increased research and development of wide-bandgap semiconductor materials and devices during the nineties. This book from the Materials Research Society focuses on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. Topics include: SiC devices and processing; SiC epitaxy and characterization; SiC bulk growth and characterization; GaN growth and characterization; and GaN devices and processing.