Mohammad Mohammadi Amiri | Akateeminen Kirjakauppa

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DEVICE PHYSICS, MODELING, TECHNOLOGY, AND ANALYSIS FOR SILICON MESFET

Iraj Sadegh Amiri; Hossein Mohammadi; Mahdiar Hosseinghadiry
Springer (2019)
Kovakantinen kirja

101,40 €

WIRELESS FOR MACHINE LEARNING - A SURVEY

Henrik Hellström; José Mairton B. da Silva; Mohammad Mohammadi Amiri; Mingzhe Chen; Viktoria Fodor; H. Vincent Poor; Fisch
now publishers Inc (2022)
Pehmeäkantinen kirja

90,20 €

HEALTH INFORMATICS AND MEDICAL SYSTEMS AND BIOMEDICAL ENGINEERING : 10TH INTERNATIONAL CONFERENCE, HIMS 2024, AND 10TH INTERNATI

Abeer Alsadoon (ed.); Farzan Shenavarmasouleh (ed.); Soheyla Amirian (ed.); Farid Ghareh Mohammadi (ed.); Hamid R. Arabnia
Springer (2025)
Pehmeäkantinen kirja

91,40 €

INTERNET COMPUTING AND IOT AND EMBEDDED SYSTEMS, CYBER-PHYSICAL SYSTEMS, AND APPLICATIONS : 25TH INTERNATIONAL CONFERENCE, ICOMP

Hamid R. Arabnia (ed.); Leonidas Deligiannidis (ed.); Soheyla Amirian (ed.); Farid Ghareh Mohammadi (ed.); Shenavarmasouleh
Springer (2025)
Pehmeäkantinen kirja

86,40 €

FOUNDATIONS OF COMPUTER SCIENCE AND FRONTIERS IN EDUCATION: COMPUTER SCIENCE AND COMPUTER ENGINEERING : 20TH INTERNATIONAL CONFE

Hamid R. Arabnia (ed.); Leonidas Deligiannidis (ed.); Soheyla Amirian (ed.); Farid Ghareh Mohammadi (ed.); Shenavarmasouleh
Springer (2025)
Pehmeäkantinen kirja

91,40 €

IMAGE PROCESSING, COMPUTER VISION, AND PATTERN RECOGNITION AND INFORMATION AND KNOWLEDGE ENGINEERING : 28TH INTERNATIONAL CONFER

Leonidas Deligiannidis (ed.); Farid Ghareh Mohammadi (ed.); Farzan Shenavarmasouleh (ed.); Soheyla Amirian (ed.); H Arabnia
Springer (2025)
Pehmeäkantinen kirja

86,40 €

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry

101,40 €

Springer
Sivumäärä: 122 sivua
Asu: Kovakantinen kirja
Julkaisuvuosi: 2019, 20.02.2019 (lisätietoa)
Kieli: Englanti

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

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