Oliver Kraft (ed.); Eduard Arzt (ed.); Cynthia A. Volkert (ed.); Paul S. Ho (ed.); Hidekazu Okabayashi (ed.) American Institute of Physics (1999) Saatavuus: Loppuunmyyty Kovakantinen kirja
The scope of this workshop was extended from the last one two years ago in two areas to reflect the current interest in interconnect metallization. First, the topics in metallization were extended to include problems related to atomic transport for reflow and filling of vias and contact holes, silicadation, and barrier metals. These topics are of particular interest for the development of the current quarter- micron metallization. The second was to include metallization for liquid crystal display of devices and surface acoustic devices in addition to semiconductor devices. Problems related to mass transport in these devices have become increasingly important, in some cases more so than those in semiconductor devices. Several papers were presented to discuss the similarities and differences of these phenomena and their mechanisms, focusing on the questions concerning why and how atoms migrate and what are the effects of the migration.
