The Advanced Metallization Conference 2006 - held in Tokyo and San Diego, California - highlights both current state-of-the-art and ongoing challenges associated with multilevel interconnects. Technical leaders from around the world gathered to discuss developments in the integration of low-dielectric constant materials with copper-based metallization, and advances in the means by which process- or stress-induced damage can be mitigated and reliability of the interconnect system improved. Contributions to the volume focus on design, development and modeling of advanced on-chip and multichip interconnect architectures and real-world implementation of optimized designs, materials and processes for production of leading-edge microelectronic devices. A keynote address by H.-S. Philip Wong, Stanford University, on 'Nanostructured Materials for Interconnects' is featured.