S. Carter; S. A. Chambers; R. Droopad; D. S. Ginley; S. Guha; H. Hosono; D. C. Paine; D. G. Schlom Materials Research Society (2003) Saatavuus: Tilaustuote Kovakantinen kirja
Andrew R Morral; Carter C Price; David S Ortiz; Bradley Wilson; Tom Latourrette; Blake W Mobley; Shawn McKay; Hen Willis National Book Network (2012) Saatavuus: Hankintapalvelu Pehmeäkantinen kirja
B. Carter Hearn Jr.; F. O. Dudas; D. H. Eggler; Donald W. Hyndman; H. E. O'Brien; I. S. McCallum; A. J. Irving; R. B. Berg John Wiley & Sons (1989) Saatavuus: Loppuunmyyty Pehmeäkantinen kirja
Ranna Parekh; Cheryl S. Al-Mateen; Maria Jose Lisotto; R. Dakota Carter American Psychiatric Association Publishing (2021) Saatavuus: Tilaustuote Pehmeäkantinen kirja
R L Stine; Heather Graham; Phil Mathews; Carter Wilson; Doug Levin; Jeff Soloway; Joseph S Walker; Alison McMahan; Palme HarperCollins (2018) Saatavuus: Hankintapalvelu Kovakantinen kirja
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.